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Manufacturer Part Number: IPD65R950CFDBTMA1
Our Part Number:

LYN-IPD65R950CFDBTMA1

Product Category: MOSFETs
Manufacturer / Brand: Infineon Technologies
Brief Description: MOSFET N-CH 650V 3.9A TO-252
Datasheet Download: IPD65R950CFDBTMA1 pdf datasheetIPD65R950CFDBTMA1.pdf
Package Type: TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity Available: 17450 Pieces
Unit Price: Quote by Email: sales@lyn-team.com
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
Delivery Time: 1-2 Days
Date Code (D/C): New
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Manufacturer Part Number : IPD65R950CFDBTMA1
Our Part Number : LYN-IPD65R950CFDBTMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V 3.9A TO-252
Packaging : Tape & Reel (TR)
Series : CoolMOS?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Vgs(th) (Max) @ Id : 4.5V @ 200μA
Gate Charge (Qg) (Max) @ Vgs : 14.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 100V
Vgs (Max) : ±20V
FET Feature : -
Power Dissipation (Max) : 36.7W (Tc)
Rds On (Max) @ Id, Vgs : 950 mOhm @ 1.5A, 10V
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO252-3
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Other Part Number : IPD65R950CFDBTMA1TR-ND
Delivery Time : Ship within 1 day.
Manufacturer Production time : 6-8 weeks
Weight : 0.3949 KG
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